High temperature CW operation of GaAs/AlGaAshigh barrier gain offset VCSELs
- 8 December 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (25) , 2136-2138
- https://doi.org/10.1049/el:19941447
Abstract
Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.Keywords
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