Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: A temperature study
- 12 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (24) , 2392-2394
- https://doi.org/10.1063/1.101088
Abstract
Laser‐induced photothermal reflectance (PTR) measurements of arsenic‐implanted silicon are reported. The photothermal signals as a function of temperature are presented for both annealed and as‐implanted silicon films. The ability to monitor the dependence of signal on doping and on the temperature suggests a novel nondestructive means for characterization of implanted layers. The latter dependence has been qualitatively explained in terms of the temperature variation of the thermal wave effect.Keywords
This publication has 16 references indexed in Scilit:
- Signal generation in optically detecting thermal-wave instrumentsJournal of Applied Physics, 1988
- Temporal behavior of modulated optical reflectance in siliconJournal of Applied Physics, 1987
- Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermiqueRevue de Physique Appliquée, 1987
- Electronic transport investigations on silicon damaged by arsenic ion implantationJournal of Applied Physics, 1986
- Response to ‘‘Comment on ‘Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectance’ ’’ [Appl. Phys. Lett. 4 9, 301 (1986)]Applied Physics Letters, 1986
- Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectanceApplied Physics Letters, 1985
- I n s i t u investigation of transport in semiconductors: A contactless approachApplied Physics Letters, 1985
- Formation of amorphous layers by ion implantationJournal of Applied Physics, 1985
- Four-point sheet resistance correction factors for thin rectangular samplesSolid-State Electronics, 1977
- Hall conductivity of amorphous semiconductors in the random phase modelJournal of Non-Crystalline Solids, 1971