Preparation and Optical Properties of AlxGa1−xP

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Abstract
Aluminum‐doped GaP has been grown from solution with concentrations up to 30% Al. The crystals are stable and do not corrode in air. Evidence that the system is forming an Al–Ga alloy is provided by an observed shift of the absorption edge and photoluminescence from those of GaP by 0.10 eV to higher energies. The green photoluminescence peaking at 2.306 eV (4.2°K) is studied and identified as pair emission. A weak band at 1.92 eV is also seen, analogous to the highly efficient Zn–O red band at 1.82 eV in Al‐free GaP. The implications of this shift in photoluminescence energy are discussed.

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