Optical properties of thin films of indium arsenide

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Abstract
Thin films of indium arsenide have been prepared by the vacuum evaporation of the elements on to heated glass substrates. The optical constants were obtained by analysis of the interference fringes shown in quantitative transmittance measurements made in the wavelength range 0.7-5.0 μm. They were found to be functions of the substrate temperature. The range of substrate temperatures and film thicknesses that was used was determined by the requirements of the preparation method and the necessity of producing a film with a specularly reflecting surface. The absorption coefficient of between 104-105 cm−1 for the semiconductor edge was found to agree with single-crystal data for films prepared above 200°C but the refractive index decreased as the substrate temperature increased, from 4 at 3.5 μm for films produced at ambient temperature to 3 for those prepared at the highest temperature of 400°C.