Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)
- 30 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (26) , 2846-2849
- https://doi.org/10.1103/physrevlett.56.2846
Abstract
Normally unoccupied adsorbate-induced states within the GaAs band gap were studied by measurement of ultraviolet-photoemission spectra from pulsed-laser-excited surfaces. Strikingly similar discrete structures within the gap were observed for submonolayer coverages of both chemisorbed oxygen and gold. The implications of these results for the understanding of Fermi-level pinning at interfaces are discussed.Keywords
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