Formation of InGaAs Quantum Dots on GaAs Multi-Atomic Steps by Metalorganic Chemical Vapor Deposition Growth
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8S)
- https://doi.org/10.1143/jjap.34.4376
Abstract
Aligned InGaAs quantum dots as small as 20 nm were naturally formed at multi-atomic step edges by metalorganic chemical vapor deposition growth. In addition, it was found that anisotropic structure of InGaAs along the step edges toward the [110]A direction appears with the increase of growth time of InGaAs. This phenomenon may be useful in the formation of quantum wires.Keywords
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