SIMS analysis of Al δ‐doped GaAs test structures using chemical bevelling as a sample preparation technique

This publication has 10 references indexed in Scilit:

• A newly developed chemical bevelling technique used for depth independent high depth resolution SIMS analysis
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
• SIMS depth profiling with sample rotation in a cameca IMS 3F
  Surface and Interface Analysis, 1994
• Interface broadening in as-grown MOVPE InPGaInAs MQW structures: dominant intermixing of group V elements directly revealed by Auger analysis of a chemically bevelled section
  Journal of Crystal Growth, 1993
• Auger electron spectroscopy and secondary ion mass spectrometry depth profiling with sample rotation
  Thin Solid Films, 1992
• A quantitative study of copper segregation in silicon under oxygen ion beam bombardment using SIMS
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
• Sample rotation during depth profiling with secondary ion mass spectrometry
  Surface and Interface Analysis, 1991
• Fast bevel cross sectioning of quantum-well semiconductor layers with high resolution
  Review of Scientific Instruments, 1990
• Improvement of crater-edge profiling for the characterization of superlattice structures
  Surface and Interface Analysis, 1989
• Crystal Defect Study in III-V Compound Technology
  Materials Science Forum, 1989
• Bevel fabrication for depth resolved studies of multiple quantum well structures
  Applied Physics A, 1988