A newly developed chemical bevelling technique used for depth independent high depth resolution SIMS analysis
- 1 August 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 101 (4) , 427-434
- https://doi.org/10.1016/0168-583x(95)00493-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Optical studies of InP/InAlAs/InP interface recombinationsApplied Surface Science, 1993
- Profiling of ultra-shallow complementary metal–oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs-GaAs superlatticesJournal of Materials Science: Materials in Electronics, 1991
- Compensation phenomena in GaAs implanted with 1 MeV silicon ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Combined application of spreading-resistance and electron-microprobe depth profiling on GaAs:Zn and Si:PApplied Surface Science, 1991
- Crystal Defect Study in III-V Compound TechnologyMaterials Science Forum, 1989
- Quantification of sputter depth profiles by means of wedge crater sputtering—a new technique for depth scale calibrationSurface and Interface Analysis, 1988
- Recent progress in high resolution depth profiling and interface analysis of thin filmsVacuum, 1987
- Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopyJournal of Vacuum Science & Technology B, 1983
- An accurate method to check chemical interfaces of epitaxial III-V compoundsApplied Physics Letters, 1982