The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs-GaAs superlattices
- 1 September 1991
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 2 (3) , 137-140
- https://doi.org/10.1007/bf00696287
Abstract
No abstract availableKeywords
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