Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices
- 9 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (10) , 588-590
- https://doi.org/10.1063/1.98089
Abstract
By performing different annealing treatments on variously tin‐doped molecular beam epitaxially grown GaAs‐Ga0.72Al0.28As quantum well structures, we show here the following: (i) tin, like other donor atoms silicon and sulfur, also induces disordering by enhancing interdiffusion coefficients, and (ii) a voluntary introduction of boron atoms in a tin‐doped structure prior to annealing leads to a retardation in tin enhanced interdiffusion.Keywords
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