Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation
- 1 July 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (7A) , L389-390
- https://doi.org/10.1143/jjap.22.l389
Abstract
The carrier depletion by boron ion implantation in sulfur doped epitaxial GaAs layers has been investigated. Diffusion coefficient of boron in GaAs is vather small and the carrier depleted region in a sulfur doped epi-layer formed by boron ion implantation remains stable after a thermal treatment at 800°C for 20 min by the powder annealing method. The implanted boron atoms deplete carriers in the sulfur doped layer, and concentration profiles of calculated residual carriers using the empirical formula which we have proposed in this paper agree well with experimental results.Keywords
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