Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs
- 11 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15) , 1240-1242
- https://doi.org/10.1063/1.99168
Abstract
Recently available Ga-Al interdiffusion results in GaAs/AlAs superlattices allow us to conclude that Ga self-diffusion in GaAs is carried by triply negatively charged Ga vacancies under intrinsic and n-doping conditions. The mechanism of the Si-enhanced superlattice disordering is the Fermi-level effect which increases the concentrations of the charged point defect species. For the effect of the p dopants Be and Zn, the Fermi-level effect has to be considered together with dopant diffusion induced Ga self-interstitial supersaturation or undersaturation. Self-diffusion of Ga in GaAs under heavy p-doping conditions is governed by positively charged Ga self-interstitials.Keywords
This publication has 28 references indexed in Scilit:
- Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlatticesApplied Physics Letters, 1987
- Destruction mechanism of III-V compound quantum well structures due to impurity diffusionJournal of Applied Physics, 1987
- SIMS Study of Si–Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1986
- Effects of Be and Si on disordering of the AlAs/GaAs superlatticeApplied Physics Letters, 1985
- Elimination of cross talk in optical directional couplersApplied Physics Letters, 1985
- Disorder of an InxGa1−xAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1983
- Impurity induced disordering of strained GaP-GaAs1−xPx(x∼0.6) superlatticesApplied Physics Letters, 1983
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Investigation of compensation in implanted n-GaAsJournal of Applied Physics, 1978