SIMS Study of Si–Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs–GaAs Superlattices
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9A) , L736-738
- https://doi.org/10.1143/jjap.25.l736
Abstract
We have studied the Si–Be co-doping effect for the suppression of the compositional disordering of AlGaAs–GaAs superlattices (SLs) by SIMS. The Si–Be co-doping is found to suppress the fast Si diffusion which is ascribed to the formation of (SiIII–SiV) pairs. The possible mechanism is that the formation of (BeIII–SiIII) pairs prevents that of (SiIII–SiV) pairs. The suppression of the Si fast diffusion impedes the SL disordering. The threshold concentration of Be required to suppress the SL (300 Å periodicity) disordering is around 2×1018 cm-3 in the case of 1.5×1019 cm-3 Si concentration.Keywords
This publication has 14 references indexed in Scilit:
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs SuperlatticeJapanese Journal of Applied Physics, 1986
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs SuperlatticesJapanese Journal of Applied Physics, 1985
- Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well StructuresJapanese Journal of Applied Physics, 1985
- Photoluminescence and stimulated emission in Si- and Ge-disordered AlxGa1−xAs-GaAs superlatticesJournal of Applied Physics, 1985
- Effects of Be and Si on disordering of the AlAs/GaAs superlatticeApplied Physics Letters, 1985
- Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusionApplied Physics Letters, 1985
- Disordering of Si-Doped AlAs/GaAs Superlattice by AnnealingJapanese Journal of Applied Physics, 1984
- Effect of interfaces upon atomic diffusion: Si and Zn in GaAsJournal of Vacuum Science & Technology B, 1984
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Beryllium and sulfur ion-implanted profiles in gaasJournal of Electronic Materials, 1976