P-n junctions and Schottky barriers formed by antimony recoil implantation
- 1 August 1986
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 5 (8) , 789-791
- https://doi.org/10.1007/bf01730093
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High-barrier Al/p-Si Schottky diodesIEEE Electron Device Letters, 1985
- Low temperature annealing behaviour of two species (argon and antimony) implanted siliconNuclear Instruments and Methods in Physics Research, 1983
- Recoil implantation of antimony into siliconNuclear Instruments and Methods, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980