High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11) , 604-606
- https://doi.org/10.1109/55.9290
Abstract
In/sub 0.08/Ga/sub 0.92/As MESFETs were grown in GaAsKeywords
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