Improved Al x Ga 1−x As/Ga 1−y In y As/GaAs strained-layer double barrier resonant tunnelling structure
- 28 April 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (9) , 553-555
- https://doi.org/10.1049/el:19880376
Abstract
We report the observation of differential negative resistance in a resonant tunnelling diode which consists of Al0.35Ga0.65As barriers and a Ga0.80In0.20As quantum well, grown on GaAs substrate by molecular beam epitaxy (MBE) at a constant substrate temperature of 550°C, for the entire structure. The current peak/valley ratio at resonance is 6 to 1 at 77 K. Our result demonstrates the feasibility of preparing device-quality MBE AlxGa1−xAs layers at low substrate temperature and fabricating quantum devices involving heterojunctions with severe strain.Keywords
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- Microelectronics: End of the beginning or beginning of the end?Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984