Metalorganic vapor-phase-epitaxial growth of Fe-doped In0.53Ga0.47As
- 1 February 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (3) , 1172-1175
- https://doi.org/10.1063/1.338163
Abstract
The electrical properties of Fe‐doped In0.53Ga0.47As, grown by metalorganic chemical vapor deposition, are described. Fe concentrations in the 1017–1018 cm−3 range are readily obtained, resulting in electrical resistivities of 50–1000 Ω cm. Holes are the majority carrier, but the effective mobility can be predominantly due to minority electrons. From measurements of the temperature dependence of the resistivity and mobility, the Fe acceptor ionization energy of 0.35 eV is determined.This publication has 9 references indexed in Scilit:
- Inversion-mode GaInAs MISFET ring oscillatorsIEEE Electron Device Letters, 1986
- High speed, ion bombarded InGaAs photoconductorsApplied Physics Letters, 1985
- High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate-transfer techniqueApplied Physics Letters, 1985
- Low-noise Ga0.47In0.53As photoconductive detectors using Fe compensationApplied Physics Letters, 1984
- Growth of Fe-doped semi-insulating InP by MOCVDJournal of Crystal Growth, 1984
- Semi-insulating In0.53Ga0.47As by Fe dopingJournal of Crystal Growth, 1983
- High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regionsElectronics Letters, 1983
- Accumulation mode Ga0.47In0.53As insulated gate field-effect transistorsApplied Physics Letters, 1983
- Optical response time of In0.53Ga0.47As/InP avalanche photodiodesApplied Physics Letters, 1982