Long-wavelength GaAs/AlAs distributed Bragg reflectorsfor use in GaSb-basedresonant cavity detectors
- 2 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (3) , 200-202
- https://doi.org/10.1049/el:19950113
Abstract
Two GaAs/AlAs Bragg reflector stacks were designed for operation at 1.68 µm and 2.2 µm to be used in resonant cavity photodetectors. The mirrors were grown by solid source MBE, and measured reflectivities were in excess of 95 and 85%, respectively.Keywords
This publication has 4 references indexed in Scilit:
- (Al,Ga)Sb long-wavelength distributed Bragg reflectorsIEEE Photonics Technology Letters, 1993
- Reduction of dark current in photodiodes by the use of a resonant cavityElectronics Letters, 1993
- Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPESemiconductor Science and Technology, 1993
- Enhancement of quantum efficiency in thin photodiodes through absorptive resonanceJournal of Lightwave Technology, 1991