Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16) , 1783-1785
- https://doi.org/10.1063/1.105090
Abstract
We report the growth of a new closely lattice‐matched II‐VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x‐ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence‐band offset.Keywords
This publication has 5 references indexed in Scilit:
- Molecular beam epitaxy of CdSe and the derivative alloys Zn1−x Cd x Se and Cd1−x M x SeJournal of Electronic Materials, 1990
- Molecular beam epitaxy of cubic Zn1−xCdxSe and Cd1−xMnxSe and related superlatticesSurface Science, 1990
- Growth of cubic (zinc blende) CdSe by molecular beam epitaxyApplied Physics Letters, 1989
- Transfer-matrix algorithm for the calculation of the band structure of semiconductor superlatticesPhysical Review B, 1988
- Tight-binding theory of heterojunction band lineups and interface dipolesJournal of Vacuum Science & Technology B, 1986