Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating
- 1 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3) , 296-298
- https://doi.org/10.1063/1.95664
Abstract
We have observed the reduction of fall times in Ga0.47In0.53As photoconductive receivers by applying a reverse back gate voltage. A reduction of fall times from 7 to ≊1 ns was obtained with a back gate voltage as low as 1.1 V. The increase in response speeds reduced the bit error rates at 420 Mb/s from 3×10−6 to 10−8 at 1.55 μm, and should improve the receiver sensitivity by ≊1 dB. More importantly, the increase in bandwidths may allow the detector to operate without equalizers for certain bit rates. This is the first demonstration of a back gated photoconductive receiver operating in the 1.1–1.65‐μm range.Keywords
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