Anisotropic pattern transfer of fine resist features to silicon nitride via an intermediate titanium layer
- 1 February 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 35 (1-4) , 99-102
- https://doi.org/10.1016/s0167-9317(96)00164-5
Abstract
No abstract availableKeywords
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