Integration of a single vertical-cavity surfaceemitting laseronto a CMOS inverter chip
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 833-834
- https://doi.org/10.1049/el:19950556
Abstract
An InGaAs/AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.Keywords
This publication has 5 references indexed in Scilit:
- Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs filmJournal of Electronic Materials, 1995
- Vertical-cavity surface-emitting lasers integratedonto silicon substrates by PdGe contactsElectronics Letters, 1994
- Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removalApplied Physics Letters, 1994
- Low stress Pd/Ge-based ohmic contacts for GaAs epitaxial-lift-offMicroelectronic Engineering, 1991
- Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substratesIEEE Photonics Technology Letters, 1989