Low stress Pd/Ge-based ohmic contacts for GaAs epitaxial-lift-off
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1) , 153-156
- https://doi.org/10.1016/0167-9317(91)90202-o
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-offElectronics Letters, 1990
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyApplied Physics Letters, 1985