Depth dependence of resist line-edge roughness: Relation to photoacid diffusion length
- 1 November 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (6) , 2927-2931
- https://doi.org/10.1116/1.1526638
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Resist line edge roughness and aerial image contrastJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Sharpened carbon nanotube probesPublished by SPIE-Intl Soc Optical Eng ,2000
- Aerial image contrast using interferometric lithography: effect on line-edge roughnessPublished by SPIE-Intl Soc Optical Eng ,1999
- Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999