Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwave-detected photoconductance decay
- 1 July 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 363-370
- https://doi.org/10.1063/1.357082
Abstract
This article presents measurements of the effective surface recombination velocity S eff at the Si–SiO2 interface of thermally oxidizedp‐type silicon wafers as a function of carrier injection level. The experiments cover a large range of injection levels and substrate resistivities, using the ‘‘microwave‐detected photoconductance decay’’ method. A minimum in S eff has been observed experimentally. The experimental results for S eff are compared with calculations based on an extended Shockley–Read–Hall formalism which includes surface band bending effects due to oxide charges.This publication has 19 references indexed in Scilit:
- High‐efficiency silicon solar cells: Full factor limitations and non‐ideal diode behaviour due to voltage‐dependent rear surface recombination velocityProgress In Photovoltaics, 1993
- Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decayJournal of Applied Physics, 1992
- Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interfaceJournal of Applied Physics, 1992
- Measurement of bulk lifetime and surface recombination velocity by infrared absorption due to pulsed optical excitationJournal of Applied Physics, 1991
- 24% efficient silicon solar cellsApplied Physics Letters, 1990
- A Comparison of Minority‐Carrier Lifetime in As‐Grown and Oxidized Float‐Zone, Magnetic Czochralski, and Czochralski SiliconJournal of the Electrochemical Society, 1990
- Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illuminationIEEE Transactions on Electron Devices, 1988
- Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocityJournal of Applied Physics, 1987
- 27.5-percent silicon concentrator solar cellsIEEE Electron Device Letters, 1986
- Calculation of surface generation and recombination velocities at the Si-SiO2 interfaceJournal of Applied Physics, 1985