Observation of arsenic precipitates in GaInAs grown at low temperature on InP
- 3 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (18) , 2209-2211
- https://doi.org/10.1063/1.109418
Abstract
Single‐crystal Ga1−xInxAs (x=0.4) grown on InP by molecular‐beam epitaxy at low substrate temperatures (250–150 °C) has been examined by transmission electron microscopy. Arsenic precipitates were observed following an ex situ anneal at 550 °C. The precipitates coarsen during higher‐temperature anneals at 600 and 700 °C. Microstructure dependence on the growth temperature was similar to that observed in low‐temperature grown GaAs. Arsenic precipitate volume fraction increased with decreasing growth temperature, with a measured maximum value of ∼0.4%.Keywords
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