Observation of impurity effects on the nucleation of arsenic precipitates in GaAs
- 11 January 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (2) , 169-171
- https://doi.org/10.1063/1.109360
Abstract
The precipitation of arsenic in low temperature GaAs uniformly doped with Si and Be has been studied by transmission electron microscopy. Following an in situ anneal at 600 °C, precipitate size and density is found to be strongly dependent on the dopant type. Impurities at the epilayer/substrate interface lead to heterogeneous nucleation of precipitates. Although precipitates were observed to nucleate heterogeneously at threading dislocations, the precipitates predominantly form homogeneously. These results are consistent with the general theory of precipitation in solids.Keywords
This publication has 16 references indexed in Scilit:
- Formation of two-dimensional arsenic-precipitate arrays in GaAsApplied Physics Letters, 1992
- Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structuresApplied Physics Letters, 1992
- Annealing studies of low-temperature-grown GaAs:BeJournal of Applied Physics, 1992
- Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layersApplied Physics Letters, 1992
- The role of As in molecular-beam epitaxy GaAs layers grown at low temperatureJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Breakdown of crystallinity in low-temperature-grown GaAs layersApplied Physics Letters, 1991
- Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °CApplied Physics Letters, 1991
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989