Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A) , L2395
- https://doi.org/10.1143/jjap.27.l2395
Abstract
Substrate hot-electron injection reveals that there exist two modes in interface state generation. Mode A, generated at the low gate oxide field (3.5 MV/cm), is attributed to hole trapping.Keywords
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