Ion-bombardment-enhanced diffusion during the growth of sputtered superlattice thin films
- 15 August 1978
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4) , 343-345
- https://doi.org/10.1063/1.90330
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Interlayer diffusion in InSb/GaSb superlattice structure grown by multitarget rf sputteringApplied Physics Letters, 1977
- Multitarget sputtering using decoupled plasmasJournal of Applied Physics, 1976
- Growth of In1−xGaxSb and In1−xAlxSb films by mulsti target R.F. sputteringThin Solid Films, 1976
- Positive-ion bombardment of substrates in rf diode glow discharge sputteringJournal of Applied Physics, 1972
- Enhanced diffusion in Si and Ge by light ion implantationJournal of Applied Physics, 1972
- Plasma Diagnostics and Energy Transport of a dc Discharge Used for SputteringJournal of Applied Physics, 1972
- A model for diffusion on cubic lattices and its application to the early stages of orderingActa Metallurgica, 1969
- The influence of static atomic displacements on the diffuse intensity scattered by solid solutionsJournal of Physics and Chemistry of Solids, 1969