Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier
- 16 November 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2914-2916
- https://doi.org/10.1063/1.122628
Abstract
We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20 Å of an intervening layer of Al2O3 at the Alq/Al interface.Keywords
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