Gap states and recombination processes in one-dimensionally ordered and disordered a-Si : H/a-Si1−xNx:H multilayer films
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 931-934
- https://doi.org/10.1016/0022-3093(87)90224-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electron-hole recombination in a-Si:H/a-Si1−xNx:H superlatticesSolid State Communications, 1987
- Nitrogen-related defects and their role in the photo-induced phenomena in a-Si1−xNx:HJournal of Non-Crystalline Solids, 1985
- Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescencePhilosophical Magazine Part B, 1985
- Light induced metastable effect on the short lived photoinduced midgap absorption in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1983