Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescence
- 27 September 1985
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (3) , 289-298
- https://doi.org/10.1080/13642818508240601
Abstract
The origins of the light-induced ESR (LESR) and the low-energy luminescence (LEL) in a-Si:H are investigated on the basis of the ODMR results. Models for the LESR centres and the LEL centres are presented and discussed.Keywords
This publication has 16 references indexed in Scilit:
- Photo-Induced ESR in Amorphous Si1-xNx:H FilmsJapanese Journal of Applied Physics, 1984
- New fabrication process for a-Si photovoltaic devices using cylindrical diode glow dischargeJournal of Non-Crystalline Solids, 1983
- Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part IPhilosophical Magazine Part B, 1982
- DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICONLe Journal de Physique Colloques, 1981
- OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) IN a-SiLe Journal de Physique Colloques, 1981
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon: Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1981
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- E.S.R. in doped CVD amorphous silicon filmsPhilosophical Magazine Part B, 1981
- Light-induced E.S.R. in amorphous siliconJournal of Electronic Materials, 1979