Rectifier characteristics based on bipolar-mode SIT operation
- 1 September 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (9) , 321-323
- https://doi.org/10.1109/55.311121
Abstract
A novel rectifier concept based on bipolar-mode static induction transistor (BSIT) operation is proposed. A numerical simulation has revealed that the turn-on mechanism of this rectifier, owing to a combination of static induction effects and minority carrier injection, can make its forward-voltage drop and reverse recovery time smaller than those of the conventional p-i-n rectifier. As an example of the design methods, the simulation has clarified the effects of decreasing the doping concentration in the channel between p/sup +/ regions on improvement in the tradeoff between a forward voltage drop and leakage current.<>Keywords
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