Structure determination of thesurface by medium-energy ion scattering
- 15 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (2) , 1585-1588
- https://doi.org/10.1103/physrevb.38.1585
Abstract
The and the Si(111)-(7×7) reconstructions are directly compared by medium-energy ion scattering. The surface is shown to induce considerably less atomic displacements than the (7×7) structure. The data are in good agreement with a simple adatom model for the reconstructed surface.
Keywords
This publication has 28 references indexed in Scilit:
- Observation of (5×5) Surface Reconstruction on Pure Silicon and its Stability Against Native-Oxide FormationPhysical Review Letters, 1986
- New Reconstructions on Silicon (111) SurfacesPhysical Review Letters, 1986
- Dimer-chain model for the 7×7 and the 2×8 reconstructed surfaces of reconstructed surfaces of Si(111) and Ge(111)Physical Review B, 1986
- Stability and surface properties of GeSi alloy films on Si(111) substrateSurface Science, 1986
- 7×7 Reconstruction of Ge(111) Surfaces under Compressive StrainPhysical Review Letters, 1985
- Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surfaceSurface Science, 1984
- LEED/AES Studies of the Ge on Si(111)7×7 SurfaceJapanese Journal of Applied Physics, 1983
- Semiconductor surfacesAdvances in Physics, 1982
- Structural study of Sn-induced superstructures on Ge(111) surfaces by RHEEDSurface Science, 1981
- Low energy electron diffraction studies on Ge and Na-covered GeSurface Science, 1967