Photoluminescence from oxidized silicon nano-lines
- 1 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 463-466
- https://doi.org/10.1016/0167-9317(95)00288-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Fabrication of sub-10-nm silicon lines with minimum fluctuationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- 10-nm silicon lines fabricated in (110) siliconMicroelectronic Engineering, 1995
- Visible luminescence from one- and two-dimensional silicon structures produced by conventional lithographic and reactive ion etching techniquesApplied Physics Letters, 1995
- 10 nm Si pillars fabricated using electron-beam lithography, reactive ion etching, and HF etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shellPhysical Review B, 1993
- Oxidation of sub-50 nm Si columns for light emission studyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990