Mass spectrometric analysis during the vapor deposition of amorphous silicon
- 1 November 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 46 (3) , 299-305
- https://doi.org/10.1016/0040-6090(77)90186-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- On the deposition of amorphous silicon films from glow discharge plasmas of silaneThin Solid Films, 1977
- Comparative study of Si(111), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spectroscopy (SIMS)Thin Solid Films, 1975
- Simulation of structural anisotropy and void formation in amorphous thin filmsApplied Physics Letters, 1974
- Growth instabilities in the deposition of amorphous filmsJournal of Non-Crystalline Solids, 1973
- Mass Spectra Analyses of Impurities and Ion Clusters in Amorphous and Crystalline Silicon FilmsJournal of the Electrochemical Society, 1973
- Mass spectrometric determination of the thermodynamic properties of the vapour species from aluminaJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1972
- Observations on Bayard–Alpert Ion Gauge Sensitivities to Various GasesJournal of Vacuum Science and Technology, 1971
- Thermodynamic Study of SiC Utilizing a Mass SpectrometerThe Journal of Chemical Physics, 1958
- Determination of Adsorption Energy Heterogeneity of Solid SurfacesThe Journal of Chemical Physics, 1954