Super low-noise HEMTs with a T-shaped WSi x gate
- 13 October 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (21) , 1327-1328
- https://doi.org/10.1049/el:19880902
Abstract
A T-shaped quarter-micron gate structure composed of WSix/Ti/Pt/Au has been developed for low-noise AlGaAs/GaAs HEMTs. The gate resistance Rg was reduced to 0.3 Ω for devices with 200 μm-wide gates despite using WSix, and the source resistance Rs reached 0.28 Ωmm by minimising the source-gate distance using a self-alignment technique. This HEMT exhibited the lowest reported noise figure of 0.54 dB with an associated gain of 12.1 dB at 12 GHz.Keywords
This publication has 3 references indexed in Scilit:
- A 20 GHz Peltier-Cooled Low Noise HEMT AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Super Low-Noise HEMTs with a T-Shaped Gate StructurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Reliability of Gate Metallization in Power GaAs MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984