Direct evidence of the occupied valence states for adsorbed Cs atoms on the Si(111) surface
- 15 April 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (11) , 8048-8050
- https://doi.org/10.1103/physrevb.39.8048
Abstract
Metastable deexcitation spectroscopy (MDS) has been applied to detect occupied valence-band features for Cs atoms adsorbed on a Si(111) surface. The MDS spectrum exhibited a clear peak structure of the Cs 6s-derived level near the saturation coverage, which is contrary to the concept of full ionization of adsorbed alkali-metal atoms. Direct evidence of the valence-band charge redistribution as a function of Cs coverage is presented.Keywords
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