A backside illuminated 400 × 400 charge-coupled device imager
- 1 November 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (11) , 1225-1232
- https://doi.org/10.1109/t-ed.1976.18583
Abstract
Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 × 160 and 400 × 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24°C and at several operating frequencies between 10 kHz and 1 MHz.Keywords
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