The solid solubility and thermal behavior of metastable concentrations of As in Si

Abstract
The solubility of As in Si as an active, noncomplexed dopant is determined by completely activating with laser annealing a metastable As concentration of about 1×1021/cm−3, and subjecting it to thermal-equilibrium annealing. The solubility is 9.3×1019 cm−3 at 700 °C and 3.2×1020 cm−3 at 1000 °C. MeV ion channeling measurements show that when As deactivation from the metastable concentration takes place at 900 °C, the As atoms stay almost completely substitutional. The deactivation process has a thermal activation energy of 2.0 eV at 350–410 °C.