The solid solubility and thermal behavior of metastable concentrations of As in Si
- 1 May 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 765-768
- https://doi.org/10.1063/1.91650
Abstract
The solubility of As in Si as an active, noncomplexed dopant is determined by completely activating with laser annealing a metastable As concentration of about 1×1021/cm−3, and subjecting it to thermal-equilibrium annealing. The solubility is 9.3×1019 cm−3 at 700 °C and 3.2×1020 cm−3 at 1000 °C. MeV ion channeling measurements show that when As deactivation from the metastable concentration takes place at 900 °C, the As atoms stay almost completely substitutional. The deactivation process has a thermal activation energy of 2.0 eV at 350–410 °C.Keywords
This publication has 8 references indexed in Scilit:
- Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beamJournal of Applied Physics, 1980
- Solid solubility of As in Si as determined by ion implantation and cw laser annealingApplied Physics Letters, 1979
- A study of the mechanism of cw laser annealing of arsenic-implanted siliconJournal of Applied Physics, 1979
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- A laser-scanning apparatus for annealing of ion-implantation damage in semiconductorsApplied Physics Letters, 1978
- Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and GePhysical Review B, 1976
- The Diffusion of Ion‐Implanted Arsenic in SiliconJournal of the Electrochemical Society, 1975
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960