A new lateral MOS-controlled thyristor
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (6) , 256-257
- https://doi.org/10.1109/55.55272
Abstract
A lateral MOS-controlled thyristor (LMCT) structure that uses an MOS gate to turn it both on and off is presented. The device structure offers improved maximum turn-off current capability and forward voltage drop. The former is achieved by using a DMOS transistor and a parasitic vertical p-n-p transistor, while the latter is achieved by eliminating a parasitic lateral p-n-p transistor in the conventional structure. The device utilizes the resurf technique to achieve high area efficiency, breakdown voltage, and reliability. Devices that have more than 250-V forward blocking capability were fabricated in dielectrically isolated silicon tubs using the standard bipolar-CMOS-DMOS process.Keywords
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