A new direct method for determining the heterojunction bipolar transistor equivalent circuit model

Publisher Website

4 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/bipol.1990.171141

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
IEEE Transactions on Electron Devices, 1989
A new method for determining the FET small-signal equivalent circuit
IEEE Transactions on Microwave Theory and Techniques, 1988
Models for contacts to planar devices
Solid-State Electronics, 1972