A technique for correction of parasitic capacitance on microwave f/sub t/ measurements of MESFET and HEMT devices
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 39 (11) , 1880-1882
- https://doi.org/10.1109/22.97490
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETsIEEE Electron Device Letters, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988