Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates
- 19 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (9) , 1591-1593
- https://doi.org/10.1063/1.1502909
Abstract
Metalorganic-chemical-vapor-phase-deposition-grown InGaN/GaN multiple-quantum-wells on Si(111) substrates were studied by high-resolution x-ray diffractometry (HRXRD) and photoluminescence (PL). By varying the quantum well deposition parameters, growth time, growth temperature, and In flow rate, systematic changes of the quantum well PL were found. The luminescence peak wavelengths and the corresponding intensities depend monotonically on each of these varied growth parameters. A considerable shift of the PL peak wavelength from blue (442 nm) to orange emission (649 nm) was achieved by decreasing the InGaN deposition temperature from 790 to 720 °C. HRXRD analysis shows changes in structural quality with InGaN growth temperature.Keywords
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