Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy
- 1 July 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (7B) , L738
- https://doi.org/10.1143/jjap.40.l738
Abstract
No abstract availableKeywords
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