Comparative Study Of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPEJournal of Crystal Growth, 1998
- Study of open-core dislocations in GaN films on (0001) sapphireApplied Physics Letters, 1997
- Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)Journal of Crystal Growth, 1997
- Nitridation process of sapphire substrate surface and its effect on the growth of GaNJournal of Applied Physics, 1996
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphireApplied Physics Letters, 1995
- Observation of nanopipes in α-GaN crystalsJournal of Crystal Growth, 1995
- Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxyApplied Physics Letters, 1995
- Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formationPhysical Review Letters, 1993
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986