Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
- 1 May 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 187 (2) , 167-177
- https://doi.org/10.1016/s0022-0248(97)00875-0
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
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