High quality GaN grown by MOVPE
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 316-320
- https://doi.org/10.1016/s0022-0248(96)00635-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Nucleation layer evolution in metal-organic chemical vapor deposition grown GaNApplied Physics Letters, 1996
- Nitrogen precursors in metalorganic vapor phase epitaxy of (Al,Ga)NJournal of Crystal Growth, 1995
- A new buffer layer for MOCVD growth of GaN on sapphireJournal of Electronic Materials, 1995
- The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphireJournal of Electronic Materials, 1995
- Optical properties of GaN epitaxial films grown by low-pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)Applied Physics Letters, 1995
- Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor depositionJournal of Vacuum Science & Technology A, 1995
- The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphireJournal of Electronic Materials, 1995
- High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor depositionApplied Physics Letters, 1994
- Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substratesApplied Physics Letters, 1993
- Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping SourceJapanese Journal of Applied Physics, 1993