An in situ infrared study of the room temperature oxidation of silicon with atomic and molecular oxygen
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 36 (1-4) , 240-246
- https://doi.org/10.1016/0169-4332(89)90919-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- Initial stages of oxidation of Si{100}(2 × 1): A combined vibrational (EELS) and electron binding energy (XPS) studySurface Science, 1985
- A study of thin silicon dioxide films using infrared absorption techniquesJournal of Applied Physics, 1982