Postdeposition Annealing Influence on Sputtered Indium Tin Oxide Film Characteristics
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1R) , 302
- https://doi.org/10.1143/jjap.33.302
Abstract
The influence of postdeposition annealing on sputtered indium tin oxide (ITO) film characteristics were investigated. The annealing experiments were carried out in air or vacuum atmosphere. Both air and vacuum annealing decreased the resistivity up to heat treatment of 200° C. Over 300° C treatment, air annealing increased resistivity whereas vacuum annealing decreased it. It was clarified that the resistivity depended on the carrier concentration. The lowest resistivity attained was 1.3×10-4 Ω·cm, with film deposited on a 250° C heated substrate and annealed in vacuum atmosphere at 300° C. Transmittance was improved in both air and vacuum annealing. In air and vacuum annealing, crystallinity improved with increasing annealing temperature. The surface topography showed no changes with air or vacuum annealing.Keywords
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